贵州源妙自动化设备有限公司

　　5SHY3545L0009 ABB 高压变频IGCT模块

　　IGCT集成门极换流晶闸管(IntergratedGateCommutatedThyristors)，它是将GTO芯片与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接而成。也就是门极集成化的GTO（Gate Turn Off）。

　　IGCT在整流环节中与SCR一脉相承，SCR是Silicon Controlled Rectifier的缩写，是可控硅整流器的简称。可控硅有单向、双向、可关断和光控几种类型。它具有体积小、重量轻、效率高、寿命长、控制方便等优点，被广泛用于可控整流、调压、逆变以及无触点开关等各种自动控制和大功率的电能转换的场合。

　　单向可控硅是一种可控整流电子元件，能在外部控制信号作用下由关断变为导通，但一旦导通，外部信号就无法使其关断，只能靠去除负载或降低其两端电压使其关断。单向可控硅是由三个PN结PNPN组成的四层三端半导体器件，与具有一个PN结的二极管相比，单向可控硅正向导通受控制极电流控制；与具有两个PN结的三极管相比，差别在于可控硅对控制极电流没有放大作用。双向可控硅具有两个方向轮流导通、关断的特性。双向可控硅实质上是两个反并联的单向可控硅，是由NPNPN五层半导体形成四个PN结构成、有三个电极的半导体器件。由于主电极的构造是对称的（都从N层引出），所以它的电极不像单向可控硅那样分别叫阳极和阴极，而是把与控制极相近的叫做di 一电极A1，另一个叫做di二电极A2。双向可控硅的主要缺点是承受电压上升率的能力较低。这是因为双向可控硅在一个方向导通结束时，硅片在各层中的载流子还没有回到截止状态的位置，必须采取相应的保护措施。双向可控硅元件主要用于交流控制电路，如温度控制、灯光控制、防爆交流开关以及直流电机调速和换向等电路。可控硅在维持电流以上一直处于开通状态，关断电流高，控制困难，关断速度较慢。逆变环节中，在LCI（负载换相逆变器）中SCR具有优异表现，可做到超大功率，电压高、电流也大。二极管（Diode，不可控整流器件）和SCR（半可控）整流均不需要PMW即可满足两象限变频器工作，PWM需要用IGBT（全控）等器件。

　　5SHY3545L0009 ABB High Voltage Inverter IGCT Module

　　IGCT is a GTO chip integrated with an anti-parallel diode and a gate drive circuit, and then connected with its gate driver in a low-inductive way in the periphery. It is also known as Gate Turn Off (GTO) with integrated gate.

　　IGCT in the rectifier link with the SCR in the same lineage, SCR is the abbreviation of Silicon Controlled Rectifier, is the abbreviation of silicon controlled rectifier. There are several types of SCRs: unidirectional, bidirectional, switchable and optical. It has the advantages of small size, light weight, high efficiency, long life, easy to control, etc. It is widely used in controlled rectification, voltage regulation, inverter, and non-contact switching and other automatic control and high-power power conversion of electrical energy occasions.

　　Unidirectional SCR is a controllable rectifier electronic components, can be in the external control signal under the action of off to on, but once on, the external signal can not make it off, only by removing the load or reduce the voltage on both sides to make it off. Unidirectional thyristor is composed of three PN junction PNPN four three-terminal semiconductor device, with a PN junction diode compared to the unidirectional thyristor forward conduction by the control of the current control pole; with two PN junction transistor compared to the difference is that the thyristor has no amplification of the control pole current. Bidirectional thyristor has two directions rotating conduction, shutdown characteristics. Bidirectional thyristor is essentially two anti-parallel unidirectional thyristor, is formed by the NPNPN five-layer semiconductor four PN structure into a semiconductor device with three electrodes. As the main electrode structure is symmetrical (all lead from the N layer), so its electrodes are not as unidirectional SCRs called anode and cathode, respectively, but with the control pole close to the first electrode is called A1, the other is called the second electrode A2. bi-directional SCRs main drawback is the ability to withstand the voltage rise rate is low. This is because the bi-directional SCR in one direction at the end of the conduction, the silicon wafer in the layers of the carriers have not returned to the cut-off state position, must be taken to protect the corresponding measures. Bidirectional SCR components are mainly used in AC control circuits, such as temperature control, lighting control, explosion-proof AC switches and DC motor speed control and commutation circuits. Thyristor in the maintenance current above has been in the open state, shutdown current is high, difficult to control, shutdown speed is slow. In the inverter link, in the LCI (Load Changing Inverter) in the SCR has excellent performance, can do ultra-high power, high voltage, current is also large. Diode (Diode, non-controllable rectifier device) and SCR (semi-controllable) rectifier do not need PMW to meet the two-quadrant inverter work, PWM need to use IGBT (full control) and other devices.